 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI6963DQ April 2001 SI6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features * -3.8 A, -20 V, RDS(ON) = 0.043 @ VGS = -4.5 V RDS(ON) = 0.070 @ VGS = -2.5 V * Extended VGSS range (12V) for battery applications * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package Applications * Load switch * Motor drive * DC/DC conversion * Power management G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -20 12 (Note 1) Units V V A W C -3.8 -30 1.0 0.6 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range -55 to +150 125 208 Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) C/W Package Marking and Ordering Information Device Marking 6963 2001 Fairchild Semiconductor Corporation Device SI6963DQ Reel Size 13'' Tape width 12mm Quantity 3000 units SI6963DQ Rev. A (W) SI6963DQ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = -12 V, VGS = 12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -16 -1 -100 100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -3.8 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.8 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -3.8 A -0.6 -1.0 3 0.036 0.056 0.049 -1.5 V mV/C 0.043 0.070 0.069 ID(on) gFS -15 13.2 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 1015 446 118 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -5 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 11 18 34 34 20 32 55 55 16 ns ns ns ns nC nC nC VDS = -5 V, VGS = -4.5 V ID = -3.8 A, 9.7 2.2 2.4 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.83 A (Note 2) -0.83 -0.7 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125 C/W (steady state) when mounted on 1 inch copper pad on FR-4. b) RJA is 208 C/W (steady state) when mounted on minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0. SI6963DQ Rev. A (W) SI6963DQ Typical Characteristics 30 VGS = -4.5V 24 -4.0V -3.5V -3.0V 1.6 VGS = -2.5V 1.4 18 -2.5V 12 1.2 -3.0V -3.5V -4.0V 6 1 -2.0V -4.5V 0 0 1 2 3 4 5 0.8 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) - ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 1.6 ID = -3.8A VGS = -4.5V 1.4 ID = -1.9A 0.12 1.2 0.09 TA = 125 C o 1 0.06 TA = 25 C o 0.8 0.03 0.6 -50 -25 0 25 50 75 100 o 0 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 VDS = -5.0V 24 125 C 18 o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C o VGS = 0V 25 C o 10 1 0.1 -55 C o TA = 125 C 25 C o o 12 0.01 0.001 0.0001 0.4 1.3 2.2 3.1 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 6 0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. SI6963DQ Rev. A (W) SI6963DQ Typical Characteristics 5 ID = -3.8A 4 -15V 3 VDS = -5V -10V 1800 1500 1200 CISS 900 f = 1MHz VGS = 0 V 2 600 COSS 1 300 CRSS 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 100s RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 VGS = -4.5V SINGLE PULSE RJA = 208 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 208C/W TA = 25C 40 30 10s DC 20 0.1 10 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 208 C/W P(pk) t1 t2 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. SI6963DQ Rev. A (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1 |
Price & Availability of SI6963
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |